Datasheet Details
| Part number | AONP38324 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 770.77 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet | AONP38324-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AONP38324 30V Dual Asymmetric N-Channel MOSFET General.
| Part number | AONP38324 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 770.77 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet | AONP38324-AlphaOmegaSemiconductors.pdf |
|
|
|
• Bottom source technology • Very Low RDS(ON) at Vgs 4.5V • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 134A 110A < 2.4mΩ < 2.3mΩ < 2.9mΩ < 2.9mΩ Applications • Buck-boost Converters in Computing • Point of Load Converter • See Note I 100% UIS Tested 100% Rg Tested DFN3.3x3.3C Top View Q1 Bottom View Pin 1 Orderable Part Number AONP38324 Pin 1 Package Type DFN3.3x3.3C Q2 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS ±12 ±12 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C 134 110 ID 84 69 IDM 328 232 Continuous Drain Current TA=25°C TA=70°C 29 29 IDSM 23 23 Avalanche Current C IAS 60 60 Avalanche energy L=0.01mH C EAS 18 18 TC=25°C Power Dissipation B TC=100°C 69 PD 27 46 18 TA=25°C Power Dissipation A TA=70°C 3.2 3.2 PDSM 2 2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ Q1 Typ Q2 Max Q1 Max Q2 32 32 39 39 58 58 73 73 1.4 2.1 1.8 2.7 Units °C/W °C/W °C/W Rev.1.0: April 2022 www.aosmd.com Page 1 of 10 AONP38324 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1 VGS=10V, ID=20A RDS(ON) Static Drain-Source On
| Part Number | Description |
|---|---|
| AONP38324U | 30V Dual Asymmetric N-Channel MOSFET |
| AONP36320 | 30V Dual Asymmetric N-Channel MOSFET |
| AONP36332U | 30V Dual Asymmetric N-Channel MOSFET |
| AONP36336 | Dual Asymmetric N-Channel MOSFET |
| AON1605 | 20V P-Channel MOSFET |
| AON1606 | 20V N-Channel MOSFET |
| AON1610 | 20V N-Channel MOSFET |
| AON1611 | P-Channel MOSFET |
| AON1620 | 12V N-Channel MOSFET |
| AON1634 | N-Channel MOSFET |