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AONS66923 - N-Channel MOSFET

General Description

Trench Power AlphaSGTTM technology Low RDS(ON) Logic Level Driving Excellent QG x RDS(ON) Product (FOM) Spike Optimized Process RoHS and Halogen-Free Compliant Applications High Frequency Switching and Synchronous Rectification P

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AONS66923 100V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Driving • Excellent QG x RDS(ON) Product (FOM) • Spike Optimized Process • RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 100V 47A < 10.8mΩ < 14.