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AONV070V65G1 - 650V Enhancement Mode GaN Transistor

Key Features

  • 650V Enhancement Mode GaN Transistor.
  • Normal-off Design.
  • Ultra-low Qg.
  • No Qrr.
  • Low Inductance.

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Full PDF Text Transcription for AONV070V65G1 (Reference)

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AONV070V65G1 650V Enhancement Mode GaN Transistor Features  650V Enhancement Mode GaN Transistor  Normal-off Design  Ultra-low Qg  No Qrr  Low Inductance Application...

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Normal-off Design  Ultra-low Qg  No Qrr  Low Inductance Applications  Server Power Supplies  High-Frequency Converters  Resonant Topologies Product Summary VDS @ TJ, max IDM RDS(ON) Qg, typ Eoss @ 400V 650V 45A 70mΩ 6.9nC 6µJ Pin Configuration and Pin Names DFN 8x8 Top View Bottom View Pin Names Gate Drain Kelvin Source Source Thermal Pad (Connected to Source) 8 1, 2, 3, 4 7 5, 6 TP D 1, 2, 3, 4 8 G SK 7 5, 6 S Absolute Maximum Ratings Exceeding the Absolute Maximum Ratings may damage the device. TA = 25°C, unless otherwise stated.

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