Proprietary aMOS5TM technology
Low RDS(ON)
Optimized switching parameters for better EMI
performance
Enhanced body diode for robustness and fast reverse
recovery
Applications
PFC and PWM stages (Flyback, LLC) of Adapter, PC Silverbox, Server, Gamin
Full PDF Text Transcription for AONV310A60 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AONV310A60. For precise diagrams, and layout, please refer to the original PDF.
AONV310A60 600V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI p...
View more extracted text
nology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • PFC and PWM stages (Flyback, LLC) of Adapter, PC Silverbox, Server, Gaming Power Supply, Industrial, TV, Lighting Top View DFN8X8 Bottom View Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 56A < 0.31Ω 20nC 3.