The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
AONV110A60
600V, a MOS5 TM N-Channel Power Transistor
General Description
• Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI
performance • Enhanced body diode for robustness and fast reverse
recovery
Product Summary
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
Applications
• PFC and PWM stages (LLC, FSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters
100% UIS Tested 100% Rg Tested
700V 140A < 0.11Ω 72nC
8.