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AONV110A60 - N-Channel Power Transistor

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Description

Proprietary αMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications PFC and P

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Datasheet Details

Part number AONV110A60
Manufacturer Alpha & Omega Semiconductors
File Size 500.39 KB
Description N-Channel Power Transistor
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AONV110A60 600V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • PFC and PWM stages (LLC, FSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters 100% UIS Tested 100% Rg Tested 700V 140A < 0.11Ω 72nC 8.
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