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AOT5N60 - 5A N-Channel MOSFET

Description

The AOT5N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Features

  • VDS (V) = 700V @ 150°C ID = 5A RDS(ON) < 1.8 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! Top View TO-220 D G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Parameter Symbol VDS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 Continuous Drain B Current Pulsed Drain Current Avalanche Current C C G C Units V V A A mJ mJ V/ns W W/ C °C °C o TC=25°C TC=100°C ID IDM IAR EAR EAS dV/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typical 54.

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Full PDF Text Transcription

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www.datasheet4u.com AOT5N60 600V, 5A N-Channel MOSFET formerly engineering part number AOT9604 General Description The AOT5N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 700V @ 150°C ID = 5A RDS(ON) < 1.
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