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Alpha & Omega Semiconductors

AOTF4126 Datasheet Preview

AOTF4126 Datasheet

N-Channel MOSFET

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AOTF4126
100V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AOTF4126 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
100% UIS Tested
100% Rg Tested
100V
27A
< 24m
< 30m
TO220F
Top View
Bottom View
D
G
G DS
S DG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current B
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain TA=25°C
Current A
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
S
Maximum
100
±25
27
19
110
6
5
28
39
42
21
2.1
1.4
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
10
48.5
2.9
Max
12
58
3.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev1 : May 2012
www.aosmd.com
Page 1 of 7




Alpha & Omega Semiconductors

AOTF4126 Datasheet Preview

AOTF4126 Datasheet

N-Channel MOSFET

No Preview Available !

AOTF4126
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
100
V
IDSS
Zero Gate Voltage Drain Current
VDS=100V, VGS=0V
TJ=55°C
10
µA
50
IGSS
Gate-Body leakage current
VDS=0V, VGS=±25V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
2
3.3
4
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
19
24
m
36
43
VGS=7V, ID=15A
23.5 30 m
gFS
Forward Transconductance
VDS=5V, ID=20A
34
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.66 1
V
IS
Maximum Body-Diode Continuous Current
40
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1400 1770 2200 pF
115 165 214 pF
33
55
80
pF
0.3 0.65 1.0
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=50V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=2.5,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
14
28
42
nC
4
9
14 nC
6
10
14
nC
12
ns
4
ns
17
ns
5
ns
12
20
26
ns
60
82 110 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1 : May 2012
www.aosmd.com
Page 2 of 7


Part Number AOTF4126
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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