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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOW2918 Datasheet Preview

AOW2918 Datasheet

100V N-Channel MOSFET

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AOW2918 pdf
AOW2918
100V N-Channel MOSFET
General Description
The AOW2918 uses Trench MOSFET technology that
is uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition, switching behavior is well
controlled with a soft recovery body diode.This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
100V
90A
< 7m
TO-262
Top View
Bottom View
D
G DS
G
SD
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±20
90
70
260
13
10
35
61
267
133
2.1
1.33
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
50
0.45
Max
15
60
0.56
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Aug 2011
Page 1 of 6
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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOW2918 Datasheet Preview

AOW2918 Datasheet

100V N-Channel MOSFET

No Preview Available !

AOW2918 pdf
AOW2918
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=100V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGSID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous CurrentG
TJ=55°C
TJ=125°C
100
2.7
260
3.3
5.6
9
34
0.7
V
1
µA
5
100 nA
3.9 V
A
7
m
12
S
1V
90 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2580
1530
37
1.5
3430
2035
63
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
38 53 nC
Qgs Gate Source Charge
VGS=10V, VDS=50V, ID=20A
12 nC
Qgd Gate Drain Charge
12 nC
tD(on)
Turn-On DelayTime
17 38 ns
tr Turn-On Rise Time
VGS=10V, VDS=50V, RL=2.5,
24 53 ns
tD(off)
Turn-Off DelayTime
RGEN=3
30 66 ns
tf Turn-Off Fall Time
24 53 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
46 65 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
230 320 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package is 120A.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0 : Aug 2011
www.aosmd.com
Page 2 of 6
Free Datasheet http://www.datasheet4u.com/


Part Number AOW2918
Description 100V N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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