Datasheet Details
| Part number | AOW296 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 424.66 KB |
| Description | N-Channel MOSFET |
| Download |
AOW296 Download (PDF)
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| Part number | AOW296 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 424.66 KB |
| Description | N-Channel MOSFET |
| Download |
AOW296 Download (PDF)
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|
|
|
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Product Summary VDS RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100V < 9.7mΩ < 12.2mΩ Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested TO-262 TO-262F D Top View Bottom View Top View Bottom View D AOW296 DS G Orderable Part Number AOW296 AOWF296 S DG AOWF296 Package Type TO-262 TO-262F GDS SDG Form Tube Tube G S Minimum Order Quantity 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOW296 (Max) AOWF296 (Max) Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain TC=25°C Current G(AOW) TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike I 10µs TC=25°C Power Dissipation B TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD ±20 70 37 46.5 23.5 180 150 18 21 14.5 16.5 40 80 120 104 26 41.5 10.5 TA=25°C Power Dissipation A TA=70°C 6.2 8.3 PDSM 4.0 5.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC AOW296 (Max) 20 65 1.2 AOWF296 (Max) 15 55 4.8 Units °C/W °C/W °C/W Rev.1.0: February 2017 www.aosmd.com Page 1 of 8 AOW296/AOWF296 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA VGS=10V, ID=20A RDS
AOW296/AOWF296 100V N-Channel AlphaSGT TM General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOW296 | N-Channel MOSFET | INCHANGE |
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