Datasheet Details
| Part number | AOW29S50 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 272.44 KB |
| Description | Power Transistor |
| Download |
AOW29S50 Download (PDF)
|
|
|
| Part number | AOW29S50 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 272.44 KB |
| Description | Power Transistor |
| Download |
AOW29S50 Download (PDF)
|
|
|
|
The AOW29S50 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 600V 120A 0.15Ω 26.6nC 6.3µJ 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View D G G D S S D G S AOW29S50 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case TC=25° C TC=100° C VGS ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA RθCS RθJC AOW29S50 500 ±30 29 18 120 6 70 608 357 2.9 100 20 -55 to 150 300 AOW29S50 65 0.5 0.35 Units V V A A mJ mJ W W/ oC V/ns ° C ° C Units ° C/W ° C/W ° C/W Rev 0: April 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOW29S50 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) VSD IS ISM Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage Maximum Body-Diode Pulsed Current ID=250µA, VGS=0V, TJ=25° C C ID=250µA, VGS=0V, TJ=150° VDS=500V, VGS=0V VDS=400V, TJ=150° C VDS=0V, VGS=±30V VDS=5V,ID=250µA VGS=10V, ID=14.5A, TJ=25° C
AOW29S50 500V 29A α MOS TM Power Transistor General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOW29S50 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOW290 | N-Channel MOSFET |
| AOW2918 | 100V N-Channel MOSFET |
| AOW292 | 100V N-Channel MOSFET |
| AOW296 | N-Channel MOSFET |
| AOW298 | 100V N-Channel MOSFET |
| AOW20S60 | Power Transistor |
| AOW2500 | N-Channel MOSFET |
| AOW2502 | N-Channel MOSFET |
| AOW25S65 | Power Transistor |
| AOW284 | N-Channel MOSFET |