Datasheet Details
| Part number | AOW284 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 317.29 KB |
| Description | N-Channel MOSFET |
| Download |
AOW284 Download (PDF)
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| Part number | AOW284 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 317.29 KB |
| Description | N-Channel MOSFET |
| Download |
AOW284 Download (PDF)
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|
|
|
• Trench Power AlphaMOS (αMOS MV) technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) Applications • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested Top View TO-262 Bottom View 80V 105A < 4.3mΩ < 5.5mΩ D Orderable Part Number AOW284 G DS G SD Package Type TO-262 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 15 55 0.52 G Form Tube S Minimum Order Quantity 1000 Maximum 80 ±20 105 82 400 15 12 65 211 96 250 125 1.9 1.2 -55 to 175 Units V V A A A mJ V W W °C Max Units 20 °C/W 65 °C/W 0.6 °C/W Rev.1.0: March 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 80 IDSS Zero Gate Voltage Drain Current VDS=80V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETE
AOW284 80V N-Channel AlphaMOS General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOW284 | N-Channel MOSFET | INCHANGE |
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