Datasheet Details
| Part number | AOW2918 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 305.90 KB |
| Description | 100V N-Channel MOSFET |
| Download |
AOW2918 Download (PDF)
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| Part number | AOW2918 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 305.90 KB |
| Description | 100V N-Channel MOSFET |
| Download |
AOW2918 Download (PDF)
|
|
|
|
The AOW2918 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 100V 90A < 7mΩ TO-262 D Top View Bottom View G DS G SD G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike I 10µs IDSM IAS, IAR EAS, EAR VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 90 70 260 13 10 35 61 120 267 133 2.1 1.33 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 12 50 0.45 Max 15 60 0.56 Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.1.0 : Aug 2016 Page 1 of 6 AOW2918 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 2.7 3.3 ID(ON) On state drain current VGS=10V, VDS=5V 260 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 5
AOW2918 100V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOW2918 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
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