Datasheet Details
| Part number | AOW2502 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 308.59 KB |
| Description | N-Channel MOSFET |
| Download |
AOW2502 Download (PDF)
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| Part number | AOW2502 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 308.59 KB |
| Description | N-Channel MOSFET |
| Download |
AOW2502 Download (PDF)
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|
|
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested TO-262 D Top View Bottom View 150V 106A < 10.7mΩ Orderable Part Number AOW2502 Package Type TO-262 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 15 55 0.35 G S Form Tube Minimum Order Quantity 1000 Maximum 150 ±20 106 67 250 16 13 40 240 180 277 111 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Max 20 65 0.45 Units °C/W °C/W °C/W Rev.1.0: December 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 150 IDSS Zero Gate Voltage Drain Current VDS=150V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 3.5 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TO-220 TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitan
AOW2502 150V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOW2502 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
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