Datasheet Details
| Part number | AOW290 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 308.72 KB |
| Description | N-Channel MOSFET |
| Download |
AOW290 Download (PDF)
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| Part number | AOW290 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 308.72 KB |
| Description | N-Channel MOSFET |
| Download |
AOW290 Download (PDF)
|
|
|
|
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) Applications • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested 100V 140A < 3.2mΩ TO-262 Top View Bottom View D D GDS S DG Orderable Part Number AOW290 Package Type TO-262 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike I 10µs TC=25°C Power Dissipation B TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 15 55 0.25 D G Form Tube S Minimum Order Quantity 1000 Maximum 100 ±20 140 140 500 17.5 14 100 500 120 500 250 1.9 1.2 -55 to 175 Units V V A A A mJ V W W °C Max 20 65 0.30 Units °C/W °C/W °C/W Rev.2.0: August 2016 www.aosmd.com Page 1 of 6 AOW290 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2.9 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETE
AOW290 100V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOW290 | N-Channel MOSFET | INCHANGE |
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