Datasheet Details
| Part number | AOY423 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 374.40 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 AOY423 Datasheet
|
|
|
| Part number | AOY423 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 374.40 KB |
| Description | P-Channel MOSFET |
| Datasheet |
AOY423 Datasheet
|
|
|
|
Product Summary The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.
With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications.
VDS ID (at VGS= -20V) RDS(ON) (at VGS= -20V) RDS(ON) (at VGS = -10V) 100% UIS Tested 100% Rg Tested -30V -70A < 6.2mΩ < 8mΩ (< 6.7mΩ∗) (< 8.5mΩ∗) Top View D TO252 DPAK Bottom View D TO-251A IPAK TO251B (IPAK short lead) Top View Bottom View DD D S G Orderable Part Number AOD423 AOI423 AOY423 G S S D G G D S G S Package Type TO-252 TO-251A TO-251B Form Tape & Reel Tube Tube Minimum Order Quantity 2500 4000 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -70 -67 -200 -15 -12 -50 125 90 45 2.5 1.6 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 16 41 0.9 Max 20 50 1.6 Units °C/W °C/W °C/W * package TO251A, TO251B Rev.1.0: August 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance Conditions Min Typ Max Units ID=-250µA, VGS=0V -30
AOD423/AOI423/AOY423 30V P-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOY423 | P-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOY2610E | 60V N-Channel MOSFET |
| AOY2N60 | N-Channel MOSFET |
| AOY514 | 30V N-Channel MOSFET |
| AOY516 | 30V N-Channel MOSFET |
| AOY66620 | 60V N-Channel MOSFET |
| AOY66919 | 100V N-Channel MOSFET |
| AOY66920 | 100V N-Channel AlphaSGT |
| AOY66923 | 100V N-Channel MOSFET |