AO4456
Description
The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is .. suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4456 is Pb-free (meets ROHS & Sony 259 specifications). AO4456 is a Green Product ordering option. AO4456 and AO4456 are electrically identical.
Features
VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 5.6mΩ (VGS = 4.5V)
D S S S G D D D D
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead TA=25°C TA=70°C IDSM IDM PDSM TJ, TSTG
Maximum 30 ±12 20 16 120 3.1 2.0 -55 to...
