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BLF10H6600PS - Power LDMOS transistor

Download the BLF10H6600PS datasheet PDF (BLF10H6600P included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power ldmos transistor.

Description

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Features

  • Excellent ruggedness (VSWR  40 : 1 through all phases).
  • Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
  • High power gain.
  • High efficiency.
  • Designed for broadband operation (400 MHz to 1000 MHz).
  • Internal input matching for high gain and optimum broadband operation.
  • Excellent reliability.
  • Easy power control.
  • Compl.

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Note: The manufacturer provides a single datasheet file (BLF10H6600P-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF10H6600PS
Manufacturer Ampleon
File Size 503.58 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF10H6600PS Datasheet

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Full PDF Text Transcription

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BLF10H6600P; BLF10H6600PS Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information Test signal f (MHz) PL(AV) (W) PL(M) (W) Gp D IMD3 (dB) (%) (dBc) RF performance in a common source 860 MHz narrowband test circuit 2-tone, class-AB pulsed, class-AB f1 = 860; f2 = 860.1 860 250 - 20.8 46 32 - 600 19.8 58 - 1.2 Features and benefits  Excellent ruggedness (VSWR  40 : 1 through all phases)  Optimum thermal behavior and reliability, Rth(j-c) = 0.
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