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BLF10M6LS135 - Power LDMOS transistor

Download the BLF10M6LS135 datasheet PDF. This datasheet also covers the BLF10M6135 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

Features

  • Easy power control.
  • Integrated ESD protection.
  • Enhanced ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (700 MHz to 1000 MHz).
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF10M6135-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF10M6LS135
Manufacturer Ampleon
File Size 350.77 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF10M6LS135 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLF10M6LS135 Power LDMOS transistor NXP
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BLF10M6135 Power LDMOS transistor NXP
BLF10M6160 Power LDMOS transistor NXP

Other Datasheets by Ampleon

Part Number Description
BLF10M6LS160 Power LDMOS transistor
BLF10M6LS200 Power LDMOS transistor
BLF10M6135 Power LDMOS transistor
BLF10M6160 Power LDMOS transistor
BLF10M6200 Power LDMOS transistor

Full PDF Text Transcription

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BLF10M6135; BLF10M6LS135 Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 869 to 894 28 26.5 21.0 28.0 ACPR (dBc) 39[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. 1.
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