BLF10M6LS160, BLF10M6160 Datasheet - Ampleon

BLF10M6LS160 Power LDMOS transistor

160 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 920 to 960.

BLF10M6LS160 Features

* Easy power control

* Integrated ESD protection

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (700 MHz to 1000 MHz)

* Internally matched for ease of use

* Compliant to Directive 2002/95/EC, regarding restric

BLF10M6LS160, BLF10M6160 Datasheet

BLF10M6LS160 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF10M6LS160, BLF10M6160. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

BLF10M6LS160, BLF10M6160

Manufacturer:

Ampleon

File Size:

348.79 KB

Description:

Power ldmos transistor.

This datasheet PDF includes multiple part numbers: BLF10M6LS160, BLF10M6160.
Please refer to the document for exact specifications by model.

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BLF10M6LS160 BLF10M6160 Power LDMOS transistor Ampleon

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