BLF189XRAS transistor equivalent, power ldmos transistor.
* Easy power control
* Integrated dual sided ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for .
in the HF to 500 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
VDS
PL
(V) (W)
5.
A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
VDS
PL
(V) (W)
50 1700
Gp (dB) 26.2
D (%) 74
1.2 Fe.
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