BLF183XRS
description
A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1. Application information
Test signal f (MHz)
(V) (W) pulsed RF
108 50 350
88 to 108
388 pulsed RF
30 to 512
30 to 512
Gp (d B) 28 26 15 14
D (%) 75 80 48 47
1.2 Features and benefits
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (HF to 600 MHz)
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- Industrial, scientific and medical applications
- Broadcast transmitter applications
BLF183XR; BLF183XRS
Power LDMOS transistor
2. Pinning information
Table 2. Pinning Pin Description
BLF183XR...
