BLF645 transistor equivalent, power ldmos transistor.
* CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:
* Average output power = 100 W
* .
The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance o.
A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for.
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