BLF6G13LS-250P transistor equivalent, power ldmos transistor.
* Easy power control
* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Internally matched for e.
at a frequency of 1.3 GHz.
Table 1. Test information
Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class.
250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
Table 1. Test information
Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.
Test signal
f
VDS
PL(1dB)
Gp
D
(GHz.
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