BLF8G10LS-300P transistor equivalent, power ldmos transistor.
* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Lower output capacitance for improved performanc.
at frequencies from 700 MHz to 1000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a comm.
300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV.
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