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BLF8G10LS-300P Datasheet - Ampleon

Power LDMOS transistor

BLF8G10LS-300P Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent pre-distortability

* Internally matched fo

BLF8G10LS-300P General Description

300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2.

BLF8G10LS-300P Datasheet (346.89 KB)

Preview of BLF8G10LS-300P PDF

Datasheet Details

Part number:

BLF8G10LS-300P

Manufacturer:

Ampleon

File Size:

346.89 KB

Description:

Power ldmos transistor.

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TAGS

BLF8G10LS-300P Power LDMOS transistor Ampleon

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