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BLP7G22-05 - LDMOS driver transistor

Description

A 5 W plastic LDMOS power transistor for base station applications from 700 MHz to 2700 MHz band.

Table 1.

Typical RF performance at Tcase = 25 C; in a class-AB application circuit.

Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for broadband operation.
  • Excellent.

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Datasheet Details

Part number BLP7G22-05
Manufacturer Ampleon
File Size 336.39 KB
Description LDMOS driver transistor
Datasheet download datasheet BLP7G22-05 Datasheet
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BLP7G22-05 LDMOS driver transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 5 W plastic LDMOS power transistor for base station applications from 700 MHz to 2700 MHz band. Table 1. Application information Typical RF performance at Tcase = 25 C; in a class-AB application circuit. Test signal f IDq VDS PL(AV) Gp (MHz) (mA) (V) (W) (dB) IS-95 [1] 788 60 28 1 23.9 2-carrier W-CDMA [2] 2140 55 28 1 16.7 Pulsed CW 2700 55 28 5 14.5 D (%) 25 27 45 ACPR (dBc) 41 40 - [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. [2] Test signal: 2-carrier W-CDMA: carrier spacing = 5 MHz. PAR = 8.4 dB at 0.
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