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BLP8G20S-80P
Power LDMOS transistor
Rev. 4 — 6 April 2016
Product data sheet
1. Product profile
1.1 General description
80 W LDMOS transistor for base station applications at frequencies from 1800 MHz to 2200 MHz.
Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common Doherty demo board.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1805 to 1880
300 28 14.2 17 47 30 [1]
1880 to 1920
300 28 14.2 16.8 46 30 [1]
2110 to 2170
300 28 14.2 16 43 30 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing = 5 MHz.
1.
BLP8G20S-80P Datasheet
