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AF9902M - 2N and 2P-Channel Enhancement Mode Power MOSFET

General Description

The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • s - Simple Drive Requirement - Low On-Resistance - Full Bridge.

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Datasheet Details

Part number AF9902M
Manufacturer Anachip
File Size 796.38 KB
Description 2N and 2P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet AF9902M Datasheet

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AF9902M 2N and 2P-Channel Enhancement Mode Power MOSFET „ Features - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product „ Product Summary CH BVDSS (V) RDS(ON) (mΩ) N 30 40 P -30 70 ID (A) 4.3 -3.3 „ General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.