.
Sanyo
LV47002P - 4-Channel BTL Power Amplifier
Ordering number : ENA1542 Monolithic Linear IC LV47002P Overview For Car Audio Systems 4-Channel BTL Power Amplifier The LV47002P is the IC for 4.
Fairchild Semiconductor
FQP22P10 - 100V P-Channel MOSFET
FQP22P10 QFET FQP22P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using F.
Fairchild Semiconductor
FDZ2552P - Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
FDZ2552P November 1999 ADVANCE INFORMATION FDZ2552P Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Combining Fairchild’s.
Fairchild Semiconductor
FQD12P10 - 100V P-Channel MOSFET
FQD12P10 / FQU12P10 QFET FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistor.
Fairchild Semiconductor
FQD2P25 - 250V P-Channel MOSFET
FQD2P25 / FQU2P25 April 2000 QFET FQD2P25 / FQU2P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect tr.
Fairchild Semiconductor
FQPF12P10 - 100V P-Channel MOSFET
FQPF12P10 QFET FQPF12P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using.
Sinopower
SM6102PSF - P-Channel MOSFET
SM6102PSF ® P-Channel Enhancement Mode MOSFET Features · -60V/-72.5A, RDS(ON)= 12.5mW(max.) @ VGS=-10V · Reliable and Rugged · Lead Free and Green D.
ON Semiconductor
NTR0202PL - Power MOSFET &20 V / &400 mA / P&Channel SOT&23 Package
NTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • • • • • .
IBM Microelectronics
IBM42P12SNYAA10 - (IBM42P1xxNYAA10) Gigabit Ethernet / Fiber Channel Small Form Factor Hot Pluggable Transceiver
www.DataSheet4U.com IBM42P12SNYAA10 IBM42P10SNYAA10 IBM42P12LNYAA10 IBM42P10LNYAA10 Gigabit Ethernet/Fibre Channel Small Form Factor Hot-Pluggable Tr.
STMicroelectronics
STL12P6F6 - P-channel Power MOSFET
STL12P6F6 P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features Order.
NXP Semiconductors
2N7002PS - N-Channel MOSFET
2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhan.
ON Semiconductor
FDFMA2P029Z-F106 - P-Channel MOSFET
MOSFET – P-Channel, POWERTRENCH) Integrated with Schottky Diode -20 V, -3.1 A, 95 mW FDFMA2P029Z, FDFMA2P029Z-F106 General Description This device is .
ON Semiconductor
FDG312P - P-Channel MOSFET
FDG312P FDG312P P-Channel 2.5V Specified PowerTrench™ MOSFET General Description Features This P-Channel MOSFET is produced using ON Semiconducto.
ON Semiconductor
NVTFS012P03P8Z - P-Channel Power MOSFET
DATA SHEET www.onsemi.com MOSFET – Power, Single P-Channel, WDFN8 -30 V NVTFS012P03P8Z, NVTFWS012P03P8Z Features • Small Footprint for Compact Desig.
SeCoS
SSPR32P03-C - P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente SSPR32P03-C -32A, -30V, RDS(ON) 27m P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” speci.
CYStech Electronics
MTB032P06V8 - P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. Spec. No. : C924V8 Issued Date : 2013.06.06 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB032P0.
Excelliance MOS
EMF44P02P - P‐Channel Logic Level Enhancement Mode Field Effect Transistor
P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐20V RDSON (MAX.) 44mΩ ID ‐5.5A G S Pb‐Free Lead Pla.
Excelliance MOS
EMB12P04F - Single P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB12P04F Single P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pin Description: BVDSS -40V RDSON (MAX.) 12.6m.
STMicroelectronics
GP3NB60K - N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT
STGP3NB60K - STGD3NB60K STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH™ IGBT TYPE STGP3NB60K STGD3NB60K STGP3.
HOOYI
HY3712PS - N-Channel MOSFET
HY3712P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS.