2P-Channel Datasheet | Specifications & PDF Download

2Pai Semi Enhanced ESD, 3.0 kV rms/6.0 kV rms 150Kbps Dual-Channel Digital Isolators Data Sheet FEATURES Ultra low power consumption (150Kbps): 0.

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2Pai Semi Enhanced ESD, 3.0 kV rms/6.0 kV rms 150Kbps Dual-Channel Digital Isolators Data Sheet FEATURES Ultra low power consumption (150Kbps): 0.

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2Pai Semi Enhanced ESD, 3.0 kV rms/6.0 kV rms 150Kbps Dual-Channel Digital Isolators Data Sheet FEATURES Ultra low power consumption (150Kbps): 0.

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Silicon N-Channel Power MOSFET CRTM045N03L2P General Description： CRTM045N03L2P the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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Ordering number : ENA1542 Monolithic Linear IC LV47002P Overview For Car Audio Systems 4-Channel BTL Power Amplifier The LV47002P is the IC for 4

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This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high s

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This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For hig

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UNISONIC TECHNOLOGIES CO., LTD 2P40 -2.0A, -400V P-CHANNEL POWER MOSFET POWER MOSFET  DESCRIPTION The UTC 2P40 is a P-channel MOS Field Effect Tran

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October 1997 FDV302P Digital FET, P-Channel General Description This P-Channel logic level enhancement mode field effect transistor is produced using

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September 1996 NDT452P P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect

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This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high s

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Data Sheet HUF75332P3 October 2013 N-Channel UltraFET Power MOSFET 55 V, 60 A, 19 mΩ These N-Channel power MOSFETs are manufactured using the innova

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® STP12PF06 P - CHANNEL 60V - 0.18 Ω - 12A TO-220 STripFET™ POWER MOSFET TYPE STP12PF06 s s s s V DSS 60 V R DS(o n) < 0.20 Ω ID 12 A www.DataSh

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FQD12P10 / FQU12P10 QFET FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistor

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Ordering number : ENA0508 Monolithic Linear IC LA47202P Overview www.DataSheet4U.com Four-Channel BTL Power Amplifier for Car Audio Systems The LA

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This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For hig

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NTJD4152P, NVJD4152P MOSFET – Dual, P-Channel, Trench Small Signal, ESD Protected, SC-88 20 V, 0.88 A Features • Leading Trench Technology for Low RD

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MOSFET – P-Channel, POWERTRENCH) Integrated with Schottky Diode -20 V, -3.1 A, 95 mW FDFMA2P029Z, FDFMA2P029Z-F106 General Description This device is

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G2K2P10SE P-Channel Enhancement Mode Power MOSFET Description The G2K2P10SE uses advanced trench technology to provide excellent RDS(ON) , low gate

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Silicon N-Channel Power MOSFET CRTD032N03L2P General Description： CRTD032N03L2P , the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

(13 views)