2P-Channel Datasheet | Specifications & PDF Download

30V P-CHANNEL ENHANCEMENT MODE MOSFET ZXM62P03G SUMMARY V(BR)DSS = -30V: RDS(on) = 0.15 : ID = -4.0A DESCRIPTION This new generation of Trench MOSF

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FDW2502P May 2000 PRELIMINARY FDW2502P Dual P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET is

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ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.15⍀; ID=-2.6A DESCRIPTION This new generation of high density MOSFE

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16-Channel Short Haul E1 Line Interface Unit IDT82P20516 Version December 17, 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone

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CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2016.06.16 Revised Date : Page No. : 1/12 2N- and 2P-Channel Enhancement Mode MOSFET MTC9

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EMF02P02H P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐20V RDSON (MAX.) 3.2mΩ ID ‐100A G UIS, R

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 12mΩ ID ‐50A G UIS, Rg 100% Tested

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STGP3NB60K - STGD3NB60K STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH™ IGBT TYPE STGP3NB60K STGD3NB60K STGP3

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GSM02P15 150V P-Channel Enhancement MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS

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FDW2502PZ March 2000 PRELIMINARY FDW2502PZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFE

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FQB22P10 / FQI22P10 QFET FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistor

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FQD12P10 / FQU12P10 QFET FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistor

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ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.20⍀; ID=-2.3A DESCRIPTION This new generation of high density MOSFE

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Ordering number : ENA1542 Monolithic Linear IC LV47002P Overview For Car Audio Systems 4-Channel BTL Power Amplifier The LV47002P is the IC for 4

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PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P TO-247 (IXTH) RDS(on) VD

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FQD12P10TM_F085 P-Channel MOSFET February 2010 FQD12P10TM_F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power fiel

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Analog Power P-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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Analog Power N-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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isc P-Channel MOSFET Transistor IXTA32P05T ·FEATURES ·Static drain-source on-resistance: RDS(on)≤39mΩ ·100% avalanche tested ·Minimum Lot-to-Lot var

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