2P-Channel Datasheet | Specifications & PDF Download

-30V, -25A P-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFN3002PT5 use advanced trench technology and design to provide excellent RDS(on) with low g

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This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For hig

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-30V, -20A P-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFN3002PT use advanced trench technology and design to provide excellent RDS(on) with low ga

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Ordering number : ENA1542 Monolithic Linear IC LV47002P Overview For Car Audio Systems 4-Channel BTL Power Amplifier The LV47002P is the IC for 4

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MMD80R1K2P Final Datasheet MMD80R1K2P 800V 1.2Ω N-channel MOSFET  Description MMD80R1K2P is power MOSFET using Magnachip’s advanced super junction t

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Silicon N-Channel Power MOSFET CRTM045N03L2P General Description： CRTM045N03L2P the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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XP65AN1K2P Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characterist

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Features  P-Channel  Very low on-resistance RDS(on) @ VGS=-4.5 V  100 Avalanche Tested  Fast Switching  Repetitive Avalanche Allowed up to Tjmax

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Features  P-Channel，-2.5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  100% Avalanche Test

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FQP12P10 QFET FQP12P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using F

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MOSFET – P-Channel, POWERTRENCH) -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P Features  Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A  Typ RD

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XP232P05013R-G P-channel MOSFET -30V, -0.45A ETR11052-001 ■FEATURES On-State Resistance Driving voltage : RDS(on)＝1.25Ω@VGS =-4.5V : -2.5V Enviro

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MOSFET – P-Channel, POWERTRENCH®, Specified 2.5 V FDN342P General Description This P−Channel 2.5 V specified MOSFET is produced in a rugged gate versi

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XP232P0501TR-G P-channel MOSFET -30V, -0.45A ETR11039-001 ■FEATURES On-State Resistance Driving voltage Environmentally Friendly : RDS(on)＝1.25Ω@VG

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MOSFET – P-Channel, POWERTRENCH) -150 V, -2 A, 307 mW FDMC86262P General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTR

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Silicon N-Channel Power MOSFET CRTD032N03L2P General Description： CRTD032N03L2P , the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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XP10N012P Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Lower On-resistance G ▼

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HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 File Number 4489.3 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel pow

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HUF75542P3, HUF75542S3S TM Data Sheet June 2000 File Number 4845.2 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220A

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