2P-Channel Datasheet | Specifications & PDF Download

 MT02P05N3  3 &KDQQHO(QKDQFHPHQW0R GH)LHOG (IIHFW7UDQVLVWRU Product Summary ‡ VDS = -20V ‡ ID= -40A ‡ RDS(ON) = 5.8m @VGS = -4.5V ‡ RDS(

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Analog Reinvented ES9822 PRO 32-bit High-Performance 2-Channel ADC Product Datasheet The Sabre ES9822 PRO is the world’s highest performance 32-bit

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Silicon N-Channel Power MOSFET CRTM045N03L2P General Description： CRTM045N03L2P the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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Ordering number : ENA1542 Monolithic Linear IC LV47002P Overview For Car Audio Systems 4-Channel BTL Power Amplifier The LV47002P is the IC for 4

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NTR4502PT1G www.VBsemi.com NTR4502PT1G P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.049 a

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Silicon N-Channel Power MOSFET CRTK032N03L2P General Description： CRTK032N03L2P the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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MMD80R1K2P Final Datasheet MMD80R1K2P 800V 1.2Ω N-channel MOSFET  Description MMD80R1K2P is power MOSFET using Magnachip’s advanced super junction t

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2Pai Semi Enhanced ESD, 3.0 kV rms/6.0 kV rms 150Kbps Dual-Channel Digital Isolators Data Sheet FEATURES Ultra low power consumption (150Kbps): 0.

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isc P-Channel MOSFET Transistor IXTP32P05T ·FEATURES ·Static drain-source on-resistance: RDS(on)≤39mΩ ·100% avalanche tested ·Minimum Lot-to-Lot var

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MMF80R1K2PB Datasheet MMF80R1K2PB 800V 1.2Ω N-channel MOSFET  Description MMF80R1K2PB is power MOSFET using Magnachip’s advanced super junction tech

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CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2016.06.16 Revised Date : Page No. : 1/12 2N- and 2P-Channel Enhancement Mode MOSFET MTC9

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MT03022P N-Channel Enhancement Mode MOSFET Feature Description 30V/240A RDS(ON)=2.0m (typ.)@VGS = 10V RDS(ON)=2.4m (typ.) @VGS = 4.5V 100% avalanche t

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MOSFET – Dual, P-Channel, ChipFET -20 V, -4.1 A NTHD4102P Features  Offers an Ultra Low RDS(ON) Solution in the ChipFET Package  Miniature ChipFET

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® STP12PF06 P - CHANNEL 60V - 0.18 Ω - 12A TO-220 STripFET™ POWER MOSFET TYPE STP12PF06 s s s s V DSS 60 V R DS(o n) < 0.20 Ω ID 12 A www.DataSh

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DATA SHEET www.onsemi.com MOSFET – Power, Single P-Channel, WDFN8 -30 V NVTFS012P03P8Z, NVTFWS012P03P8Z Features • Small Footprint for Compact Desig

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June 1997 NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode po

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isc N-Channel MOSFET Transistor MMF80R1K2P ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 1.2Ω@10V ·Fast Switching Speed ·100% avalanche tested ·

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 MT82P03N3  3 &KDQQHO(QKDQFHPHQW0R GH)LHOG (IIHFW7UDQVLVWRU Product Summary ‡ VDS = -20V ‡ ID= -40A ‡ RDS(ON) 9 m ‡ RDS(ON) 13 m @VGS

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CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -11A, RDS(ON) =315mΩ @VGS = -10V. Super high dense cell design fo

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