FDMC86262P P-Channel MOSFET

ON Semiconductor

Description

MOSFET * P-Channel, POWERTRENCH) -150 V, -2 A, 307 mW FDMC86262P General .
This P. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology.

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Datasheet Specifications

Part number: FDMC86262P
Manufacturer: ON Semiconductor ↗
File Size: 190.46 KB
Datasheet: FDMC86262P-ONSemiconductor.pdf
Description: P-Channel MOSFET

Features

* Max rDS(on) = 307 mW at VGS =
* 10 V, ID =
* 2 A
* Max rDS(on) = 356 mW at VGS =
* 6 V, ID =
* 1.8 A
* Very Low rDS(on) Mid Voltage P
* Channel Silicon Technology Optimised for Low Qg

Applications

* as Well as Load Switch Applications
* 100% UIL Tested
* This Device is Pb
* Free, Halide Free and is ROHS Compliant Applications
* Active Clamp Switch
* Load Switch DATA SHEET www. onsemi. com VDS
* 150 V rDS(on) MAX 307 mW @
* 10 V 356 mW @

FDMC86262P Distributors

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FDMC86262P P-Channel MOSFET ON Semiconductor

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