FDMC8622 Datasheet - Fairchild Semiconductor

FDMC8622 N-Channel Power Trench MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Application * DC-DC Primary Switch D D D D D D D G 5 6 7 8 4 3 2 1 G S S S D S S S MLP 3.3X3.3 MOSFET Maxi.

FDMC8622 Features

* Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A

* Max rDS(on) = 90 m: at VGS = 6 V, ID = 3 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability in a widely used surface mount package

* 100% UIL Tested

FDMC8622_FairchildSemiconductor.pdf