FDMC8622 - N-Channel Power Trench MOSFET

Fairchild Semiconductor

FDMC8622 Datasheet Preview — Preview of FDMC8622 PDF

Datasheet Details

Part number	FDMC8622
Manufacturer	Fairchild ↗ Semiconductor
File Size	359.83 KB
Description	N-Channel Power Trench MOSFET
Datasheet	FDMC8622_FairchildSemiconductor.pdf

FDMC8622 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. DC-DC Primary Switch D D D D D D D G 5 6 7 8 4 3 2 1 G S S S D S S S MLP 3.3X3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Cont

Features

Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A.
Max rDS(on) = 90 m: at VGS = 6 V, ID = 3 A.
High performance trench technology for extremely low rDS(on).
High power and current handling capability in a widely used surface mount package.
100% UIL Tested.
Termination is Lead-free and RoHS Compliant General.

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Published: Sep 9, 2013 |