FDMC8622 N-Channel Power Trench MOSFET

Fairchild Semiconductor

Description

FDMC8622 N-Channel Power Trench® MOSFET September 2012 FDMC8622 N-Channel Power Trench® MOSFET 100 V, 16 A, 56 m: .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching perfor.

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Datasheet Specifications

Part number: FDMC8622
Manufacturer: Fairchild Semiconductor
File Size: 359.83 KB
Datasheet: FDMC8622_FairchildSemiconductor.pdf
Description: N-Channel Power Trench MOSFET

Features

* Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A
* Max rDS(on) = 90 m: at VGS = 6 V, ID = 3 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used surface mount package
* 100% UIL Tested

FDMC8622 Distributors

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FDMC8622 N-Channel Power Trench MOSFET Fairchild Semiconductor

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