FDMC86012 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) 30 V, 88 A, 2.7 mW FDMC86012 General .
This device has been designed specifically to improve the efficiency of DC/DC converters.

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Datasheet Specifications

Part number: FDMC86012
Manufacturer: ON Semiconductor ↗
File Size: 541.13 KB
Datasheet: FDMC86012-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max RDS(on) = 2.7 mW at VGS = 4.5 V, ID = 23 A
* Max RDS(on) = 4.7 mW at VGS = 2.5 V, ID = 17.5 A
* High Performance Technology for Extremely low RDS(on)
* Termination is Lead
* free
* 100% UIL Tested
* Pb
* Free, Halide Free and RoHS Com

Applications

* 3.3 V Input Synchronous Buck Switch
* Synchronous Rectifier MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±12 V ID Drain Current: A Continuous, TC = 25°C 88 Continuous, T

FDMC86012 Distributors

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FDMC86012 N-Channel MOSFET ON Semiconductor

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