FDMC86184 N-Channel MOSFET

ON Semiconductor

Description

FDMC86184 N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com FDMC86184 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 57 A, 8.5 mΩ Fea.
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMC86184
Manufacturer: ON Semiconductor ↗
File Size: 292.61 KB
Datasheet: FDMC86184-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID =21 A
* Max rDS(on) = 24.8 mΩ at VGS = 6 V, ID = 10 A
* 50% Lower Qrr than Other MOSFET Suppliers
* Lowers Switching Noise/EMI
* MSL1 Robust Package Design
* 100% UIL Te

Applications

* Primary DC-DC MOSFET
* Synchronous Rectifier in DC-DC and AC-DC
* Motor Drive
* Solar Pin 1 Pin 1 SS S S D G S D D D DD Top Bottom S D G D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain

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FDMC86184 N-Channel MOSFET ON Semiconductor

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