FDMC86183 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 100 V, 47 A, 12.8 mW FDMC86183 General .
This N. Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMC86183
Manufacturer: ON Semiconductor ↗
File Size: 398.62 KB
Datasheet: FDMC86183-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max RDS(on) = 12.8 mW at VGS = 10 V, ID = 16 A
* Max RDS(on) = 34.6 mW at VGS = 6 V, ID = 8 A
* 50% Lower Qrr than Other MOSFET Suppliers
* Lowers Switching Noise/EMI
* MSL1 Robust Package Design
* 100% UIL T

Applications

* Primary DC
* DC MOSFET
* Synchronous Rectifier in DC
* DC and AC
* DC
* Motor Drive
* Solar MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20

FDMC86183 Distributors

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FDMC86183 N-Channel MOSFET ON Semiconductor

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