Description
MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 100 V, 7.5 A, 103 mW FDMC86116LZ, FDMC86116LZ-L701 General .
This N.
Channel logic Level MOSFETs are produced using
onsemiās advanced POWERTRENCH process that incorporates Shielded Gate technology.
Features
* Max RDS(on) = 103 mW at VGS = 10 V, ID = 3.3 A
* Max RDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A
* HBM ESD Protection Level > 3 kV Typical (Note 1)
* 100% UIL Tested
* These Devices are Pb
Applications
* DC
* DC Conversion
DATA SHEET www. onsemi. com
8765
SSSG
1234
DDDD
Top
Bottom
WDFN8 3.3x3.3, 0.65P CASE 511DR
FDMC3612
SS SG
DDDD
Top
Bottom
WDFN8 3.3x3.3, 0.65P CASE 511DQ
FDMC3612
* L701
PIN ASSIGNMENT
S1 S2 S3 G4
8D 7D 6D 5D
1. The diode connected between gat