This N *Channel logic Level MOSFETs are produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology.
This process has been optimized for the on *state resistance and yet maintain superior switching performance.
G *S zener has been added to enh
FDMC86116LZ-L701 Features
* Max RDS(on) = 103 mW at VGS = 10 V, ID = 3.3 A
* Max RDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A
* HBM ESD Protection Level > 3 kV Typical (Note 1)
* 100% UIL Tested
* These Devices are Pb
* Free and are RoHS Compliant Applications
* DC
FDMC86116LZ-ONSemiconductor.pdf
Datasheet Details
FDMC86116LZ-L701, FDMC86116LZ
576.97 KB
N-channel power mosfet.
This datasheet PDF includes multiple part numbers: FDMC86116LZ-L701, FDMC86116LZ.
Please refer to the document for exact specifications by model.
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