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FDMC86244 - N-Channel MOSFET

Description

This N

advanced POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

Features

  • Max rDS(on) = 134 mW at VGS = 10 V, ID = 2.8 A.
  • Max rDS(on) = 186 mW at VGS = 6 V, ID = 2.4 A.
  • Low Profile.
  • 1 mm Max in Power 33.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FDMC86244

Datasheet Details

Part number FDMC86244
Manufacturer ON Semiconductor
File Size 450.36 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC86244 Datasheet
Additional preview pages of the FDMC86244 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 150 V, 9.4 A, 134 mW FDMC86244, FDMC86244-L701 General Description This N−Channel MOSFET is produced using ON Semiconductor‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features • Max rDS(on) = 134 mW at VGS = 10 V, ID = 2.8 A • Max rDS(on) = 186 mW at VGS = 6 V, ID = 2.4 A • Low Profile − 1 mm Max in Power 33 • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • DC − DC Conversion www.onsemi.com 8 765 SSSG 1234 DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DR FDMC86244 SS SG DDDD Top Bottom WDFN8 3.3x3.3, 0.
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