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FDMC86102 N-Channel Power Trench MOSFET

Fairchild Semiconductor

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Description

FDMC86102 N-Channel Power Trench® MOSFET March 2012 FDMC86102 N-Channel Power Trench® MOSFET 100 V, 20 A, 24 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-.

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Datasheet Specifications

Part number: FDMC86102
Manufacturer: Fairchild Semiconductor
File Size: 359.31 KB
Datasheet: FDMC86102_FairchildSemiconductor.pdf
Description: N-Channel Power Trench MOSFET

Features

* Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A
* Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A
* Low Profile - 1 mm max in Power 33
* 100% UIL Tested

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FDMC86102 N-Channel Power Trench MOSFET Fairchild Semiconductor

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