FDMC86160ET100 Datasheet (ON Semiconductor)

FDMC86160ET100, N-Channel MOSFET

This N *Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized for the on *state resistance.

This device is well suited for applications where ulta low RDS (on) is required in small spaces such

FDMC86160ET100 Features

* Extended TJ Rating to 175°C

* Shielded Gate MOSFET Technology

* Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A

* Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A

* High Performance Technology for Extremely Low rDS(on)

* Termination is Lead

* free and Ro