Part number:
FDMC86160ET100
Manufacturer:
File Size:
470.79 KB
Description:
N-channel mosfet.
FDMC86160ET100-ONSemiconductor.pdf
Datasheet Details
Part number:
FDMC86160ET100
Manufacturer:
File Size:
470.79 KB
Description:
N-channel mosfet.
FDMC86160ET100, N-Channel MOSFET
This N *Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.
This process has been optimized for the on *state resistance.
This device is well suited for applications where ulta low RDS (on) is required in small spaces such
FDMC86160ET100 Features
* Extended TJ Rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A
* Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A
* High Performance Technology for Extremely Low rDS(on)
* Termination is Lead
* free and Ro
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