FDMC86160ET100 - N-Channel MOSFET

ON Semiconductor

FDMC86160ET100 Datasheet Preview — Preview of FDMC86160ET100 PDF

Datasheet Details

Part number	FDMC86160ET100
Manufacturer	ON Semiconductor ↗
File Size	470.79 KB
Description	N-Channel MOSFET
Datasheet	FDMC86160ET100-ONSemiconductor.pdf

FDMC86160ET100 Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.This process has been optimized for the on state resistance.

Features

Extended TJ Rating to 175°C.
Shielded Gate MOSFET Technology.
Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A.
Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A.
High Performance Technology for Extremely Low rDS(on).
Termination is Lead.
free and RoHS Compliant.

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Published: Dec 19, 2023 |