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FDMC86139P - MOSFET

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FDMC86139P Product details

Description

Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology.This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance. This product is optimised for fast switching app

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