Datasheet Details
Part number:
FDMC86160
Manufacturer:
Fairchild Semiconductor
File Size:
305.93 KB
Description:
N-Channel Power Trench MOSFET
FDMC86160 N-Channel Power Trench® MOSFET January 2013 FDMC86160 N-Channel Power Trench® MOSFET 100 V, 43 A, 14 mΩ Features * Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A * Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A * High performance technology for extremely low rDS(on)
FDMC86160_FairchildSemiconductor.pdf
FDMC86160, N-Channel Power Trench MOSFET
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for applications where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and
FDMC86160 Distributor
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