FDMC86160 N-Channel Power Trench MOSFET

Fairchild Semiconductor

Description

FDMC86160 N-Channel Power Trench® MOSFET January 2013 FDMC86160 N-Channel Power Trench® MOSFET 100 V, 43 A, 14 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-s.

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Datasheet Specifications

Part number: FDMC86160
Manufacturer: Fairchild Semiconductor
File Size: 305.93 KB
Datasheet: FDMC86160_FairchildSemiconductor.pdf
Description: N-Channel Power Trench MOSFET

Features

* Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
* Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
* High performance technology for extremely low rDS(on)

Applications

* where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and orring functions. Applications
* Bridge Topologies
* Synchronous Rectifier Pin 1 Pin 1 S S S S G S S D D D G D D D D D Top Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwi

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FDMC86160 N-Channel Power Trench MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDMC86160-like datasheet