Datasheet4U Logo Datasheet4U.com

FDMC86102L - MOSFET

📥 Download Datasheet

Preview of FDMC86102L PDF
datasheet Preview Page 2 datasheet Preview Page 3

FDMC86102L Product details

Description

Shielded Gate MOSFET Technology Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A Low Profile - 1 mm max in Power 33 RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.This process has been optimized for the on-state resistance and yet maintain superior switching performance.Application DC -

Features

📁 FDMC86102L Similar Datasheet

Other Datasheets by Fairchild Semiconductor
Published: |