Description
MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 150 V, 9.4 A, 134 mW FDMC86244, FDMC86244-L701 General .
This N.
Channel MOSFET is produced using ON Semiconductor‘s
advanced POWERTRENCH process that incorporates Shielded Gate technology.
Features
* Max rDS(on) = 134 mW at VGS = 10 V, ID = 2.8 A
* Max rDS(on) = 186 mW at VGS = 6 V, ID = 2.4 A
* Low Profile
* 1 mm Max in Power 33
* 100% UIL Tested
* These Devices are Pb
Applications
* DC
* DC Conversion
www. onsemi. com
8 765
SSSG
1234
DDDD
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WDFN8 3.3x3.3, 0.65P CASE 511DR
FDMC86244
SS SG
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WDFN8 3.3x3.3, 0.65P CASE 511DQ
FDMC86244
* L701
MARKING DIAGRAM
ON AXYKK FDMC 86244
FDMC 86244 ALYW
FDMC86244
FDMC86244