FDMC86248 N-Channel Power Trench MOSFET

Fairchild Semiconductor

Description

FDMC86248 N-Channel Power Trench® MOSFET September 2012 FDMC86248 N-Channel Power Trench® MOSFET 150 V, 13 A, 90 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-.

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Datasheet Specifications

Part number: FDMC86248
Manufacturer: Fairchild Semiconductor
File Size: 266.40 KB
Datasheet: FDMC86248_FairchildSemiconductor.pdf
Description: N-Channel Power Trench MOSFET

Features

* Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A
* Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.9 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* 100% UIL Tested

Applications

* Primary MOSFET
* MV synchronous rectifier Top Bottom S Pin 1 S S S G S S D D D G D D D D D Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Co

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FDMC86248 N-Channel Power Trench MOSFET Fairchild Semiconductor

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