FDMC86248 - N-Channel Power Trench MOSFET

Fairchild Semiconductor

FDMC86248 Datasheet Preview — Preview of FDMC86248 PDF

Datasheet Details

Part number	FDMC86248
Manufacturer	Fairchild ↗ Semiconductor
File Size	266.40 KB
Description	N-Channel Power Trench MOSFET
Datasheet	FDMC86248_FairchildSemiconductor.pdf

FDMC86248 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Primary MOSFET MV synchronous rectifier Top Bottom S Pin 1 S S S G S S D D D G D D D D D Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage

Features

Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A.
Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.9 A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
100% UIL Tested.
RoHS Compliant General.

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Published: Sep 9, 2013 |