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FDMC86248

N-Channel Power Trench MOSFET

FDMC86248 Features

* Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A

* Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.9 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* 100% UIL Tested

* RoHS Compliant General Description This N-Channel MOSFET is prod

FDMC86248 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications

* Primary MOSFET

* MV synchronous rectifier Top Bott.

FDMC86248 Datasheet (266.40 KB)

Preview of FDMC86248 PDF

Datasheet Details

Part number:

FDMC86248

Manufacturer:

Fairchild Semiconductor

File Size:

266.40 KB

Description:

N-channel power trench mosfet.

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FDMC86248 N-Channel Power Trench MOSFET Fairchild Semiconductor

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