FDMC86240 - N-Channel MOSFET
* Shielded Gate MOSFET Technology * Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A * Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A * Low Profile - 1 mm max in Power 33 * 100% UIL Tested * RoHS Compliant This N-Channel MOSFET is produced using Fairchild