FDMC86259P - MOSFET
* Max rDS(on) = 107 m: at VGS = -10 V, ID = -3 A * Max rDS(on) = 137 m: at VGS = -6 V, ID = -2.7 A * Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process
