Datasheet Details
| Part number | FDMC86259P |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 199.39 KB |
| Description | MOSFET |
| Datasheet |
 FDMC86259P-FairchildSemiconductor.pdf
|
| Part number | FDMC86259P |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 199.39 KB |
| Description | MOSFET |
| Datasheet |
FDMC86259P-FairchildSemiconductor.pdf
|
Max rDS(on) = 107 m: at VGS = -10 V, ID = -3 A Max rDS(on) = 137 m: at VGS = -6 V, ID = -2.7 A Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This product is optimised for fast switching applications as well as
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