FDMC86261P - MOSFET

Fairchild Semiconductor

FDMC86261P Datasheet Preview — Preview of FDMC86261P PDF

Datasheet Details

Part number	FDMC86261P
Manufacturer	Fairchild ↗ Semiconductor
File Size	336.78 KB
Description	MOSFET
Datasheet	FDMC86261P-FairchildSemiconductor.pdf

FDMC86261P Product details

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. Active Clamp Switch Load Switch Top Bottom Pin 1 SS S G MLP 3.3x3.3 D D D D S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate

Features

Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A.
Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A.
Very low RDS-on mid voltage P channel silicon technology optimised for low Qg.
This product is optimised for fast switching.

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Published: Jan 10, 2017 |