FDMC86261P Datasheet - Fairchild Semiconductor

FDMC86261P MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance. Applications * Active Clamp Switch * Load Switch.

FDMC86261P Features

* Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A

* Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A

* Very low RDS-on mid voltage P channel silicon technology optimised for low Qg

* This product is optimised for fast switching applications as well as load switch appl

FDMC86261P-FairchildSemiconductor.pdf