FDMC86261P MOSFET

Fairchild Semiconductor

Description

FDMC86261P P-Channel PowerTrench® MOSFET June 2014 FDMC86261P P-Channel PowerTrench® MOSFET -150 V, -9 A, 160 mΩ .
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology.

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Datasheet Specifications

Part number: FDMC86261P
Manufacturer: Fairchild Semiconductor
File Size: 336.78 KB
Datasheet: FDMC86261P-FairchildSemiconductor.pdf
Description: MOSFET

Features

* Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A
* Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A
* Very low RDS-on mid voltage P channel silicon technology optimised for low Qg

Applications

* as well as load switch applications
* 100% UIL Tested

FDMC86261P Distributors

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FDMC86261P MOSFET Fairchild Semiconductor

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