FDMC86260 - N-Channel MOSFET

ON Semiconductor

FDMC86260 Datasheet Preview — Preview of FDMC86260 PDF

Datasheet Details

Part number	FDMC86260
Manufacturer	ON Semiconductor ↗
File Size	542.29 KB
Description	N-Channel MOSFET
Datasheet	FDMC86260-ONSemiconductor.pdf

FDMC86260 Product details

Description

This N Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology.This process has been optimized for the on state resistance and yet maintain superior switching performance.

Features

Shielded Gate MOSFET Technology.
Max RDS(on) = 34 mW at VGS = 10 V, ID = 5.4 A.
Max RDS(on) = 44 mW at VGS = 6 V, ID = 4.8 A.
High Performance Technology for Extremely Low RDS(on).
100% UIL Tested.
Pb.
Free, Halide Free and RoHS Compliant.

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Published: Dec 19, 2023 |