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FDMC86260 - N-Channel MOSFET

Description

This N

POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 34 mW at VGS = 10 V, ID = 5.4 A.
  • Max RDS(on) = 44 mW at VGS = 6 V, ID = 4.8 A.
  • High Performance Technology for Extremely Low RDS(on).
  • 100% UIL Tested.
  • Pb.
  • Free, Halide Free and RoHS Compliant.

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Datasheet preview – FDMC86260

Datasheet Details

Part number FDMC86260
Manufacturer onsemi
File Size 542.29 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC86260 Datasheet
Additional preview pages of the FDMC86260 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 150 V, 25 A, 34 mW FDMC86260 General Description This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 34 mW at VGS = 10 V, ID = 5.4 A • Max RDS(on) = 44 mW at VGS = 6 V, ID = 4.
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