FDMC86260 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 150 V, 25 A, 34 mW FDMC86260 General .
This N. Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMC86260
Manufacturer: ON Semiconductor ↗
File Size: 542.29 KB
Datasheet: FDMC86260-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max RDS(on) = 34 mW at VGS = 10 V, ID = 5.4 A
* Max RDS(on) = 44 mW at VGS = 6 V, ID = 4.8 A
* High Performance Technology for Extremely Low RDS(on)
* 100% UIL Tested
* Pb
* Free, Halide Free and RoHS Compliant

Applications

* DC
* DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current: Continuous, TC = 25°C (Note 5) Continuous, TC = 100°C (Note 5) Continuous, TA = 25°C (Note 1a) Puls

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FDMC86260 N-Channel MOSFET ON Semiconductor

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