FDMC86260 - N-Channel MOSFET
FDMC86260 Features
* Shielded Gate MOSFET Technology
* Max RDS(on) = 34 mW at VGS = 10 V, ID = 5.4 A
* Max RDS(on) = 44 mW at VGS = 6 V, ID = 4.8 A
* High Performance Technology for Extremely Low RDS(on)
* 100% UIL Tested
* Pb
* Free, Halide Free and RoHS Compliant
