FDMC86260 Datasheet - ON Semiconductor

FDMC86260 N-Channel MOSFET

FDMC86260 Features

* Shielded Gate MOSFET Technology

* Max RDS(on) = 34 mW at VGS = 10 V, ID = 5.4 A

* Max RDS(on) = 44 mW at VGS = 6 V, ID = 4.8 A

* High Performance Technology for Extremely Low RDS(on)

* 100% UIL Tested

* Pb

* Free, Halide Free and RoHS Compliant

Datasheet Details

FDMC86260

542.29 KB

N-channel mosfet.

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FDMC86260 FDMC86260 N-Channel MOSFET ON Semiconductor

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