FDMC86102L - N-Channel MOSFET
FDMC86102L Features
* Shielded Gate MOSFET Technology
* Max RDS(on) = 23 mW at VGS = 10 V, ID = 7 A
* Max RDS(on) = 34 mW at VGS = 4.5 V, ID = 5.5 A
* Low Profile
* 1 mm Max in Power 33
* Pb
* Free, Halide Free and RoHS Compliant Applications
* DC
* DC
