FDMC86102L N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 100 V, 18 A, 23 mW FDMC86102L General .
This N. Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMC86102L
Manufacturer: ON Semiconductor ↗
File Size: 306.37 KB
Datasheet: FDMC86102L-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max RDS(on) = 23 mW at VGS = 10 V, ID = 7 A
* Max RDS(on) = 34 mW at VGS = 4.5 V, ID = 5.5 A
* Low Profile
* 1 mm Max in Power 33
* Pb

Applications

* DC
* DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current: A Continuous, TC = 25°C 18 Continuous, TA = 25°C (Note 1a) 7 Pulsed 30 EAS Si

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FDMC86102L N-Channel MOSFET ON Semiconductor

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