FDMC86012 MOSFET

Fairchild Semiconductor

Description

FDMC86012 N-Channel Power Trench® MOSFET October 2012 FDMC86012 N-Channel Power Trench® MOSFET 30 V, 88 A, 2.7 mΩ .
This device has been designed specifically to improve the efficiency of DC/DC converters.

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Datasheet Specifications

Part number: FDMC86012
Manufacturer: Fairchild Semiconductor
File Size: 240.02 KB
Datasheet: FDMC86012-FairchildSemiconductor.pdf
Description: MOSFET

Features

* Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 23 A
* Max rDS(on) = 4.7 mΩ at VGS = 2.5 V, ID = 17.5 A
* High performance technology for extremely low rDS(on)
* Termination is Lead-free
* 100% UIL Tested

Applications

* 3.3 V input synchronous buck switch
* Synchronous rectifier Pin 1 Pin 1 S S SG S S D D D DD D Top Bottom Power 33 SD GD MOSFET Maximum Ratings TA = 25

FDMC86012 Distributors

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FDMC86012 MOSFET Fairchild Semiconductor

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