Datasheet Details
Part number:
FDMC86012
Manufacturer:
Fairchild Semiconductor
File Size:
240.02 KB
Description:
MOSFET
FDMC86012 N-Channel Power Trench® MOSFET October 2012 FDMC86012 N-Channel Power Trench® MOSFET 30 V, 88 A, 2.7 mΩ Features * Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 23 A * Max rDS(on) = 4.7 mΩ at VGS = 2.5 V, ID = 17.5 A * High performance technology for extremely low rD
FDMC86012-FairchildSemiconductor.pdf
FDMC86012, MOSFET
This device has been designed specifically to improve the efficiency of DC/DC converters.
Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses.
Low gate resistance and very low Miller charge enable excellent
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