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FDMC86160 N-Channel MOSFET

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Description

MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 100 V, 43 A, 14 mW FDMC86160 General .
This N. Channel MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology.

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Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A
* Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A
* High Performance Technology for Extremely Low rDS(on)
* This Device is Lead
* Free and RoHS Compliant ABSOLUTE MAXIMUM RATINGS

Applications

* where ulta low RDS(on) is required in small spaces such as High performance VRM, POL and orring functions. Applications
* Bridge Topologies

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