FDMC86160 Datasheet - ON Semiconductor

FDMC86160 N-Channel MOSFET

This N *Channel MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on *state resistance. This device is well suited for applications where ulta low RDS(on) is required in small spaces such a.

FDMC86160 Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A

* Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A

* High Performance Technology for Extremely Low rDS(on)

* This Device is Lead

* Free and RoHS Compliant ABSOLUTE MAXIMUM RATINGS

FDMC86160-ONSemiconductor.pdf