FDMC86160

N-Channel MOSFET

ON Semiconductor

FDMC86160 Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A

* Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A

* High Performance Technology for Extremely Low rDS(on)

* This Device is Lead

* Free and RoHS Compliant ABSOLUTE MAXIMUM RATINGS

FDMC86160 General Description

This N

*Channel MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on

*state resistance. This device is well suited for applications where ulta low RDS(on) is required in small spaces such a.

FDMC86160 Datasheet (614.99 KB)