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FDMC86160ET100 - MOSFET

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Description

Extended TJ rating to 175°C Shielded Gate MOSFET Technology Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.This process has been optimized for the on-state resi

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