* General Description
* Extended TJ rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
* Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
* High performance technology for extremely low rDS(on)
* Termination is Le
FDMC86160ET100 Datasheet (210.88 KB)
FDMC86160ET100
Fairchild Semiconductor
210.88 KB
Mosfet.
FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET
FDMC86160ET100
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 43 A, 14 mΩ
January 201.
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