FDMC86160ET100 MOSFET

Fairchild Semiconductor

Description

FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 43 A, 14 mΩ January 201.
Extended TJ rating to 175°C. Shielded Gate MOSFET Technology. Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A. Max r.

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Datasheet Specifications

Part number: FDMC86160ET100
Manufacturer: Fairchild Semiconductor
File Size: 210.88 KB
Datasheet: FDMC86160ET100-FairchildSemiconductor.pdf
Description: MOSFET

Applications

* where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and orring functions. Applications
* Bridge Topologies
* Synchronous Rectifier Pin 1 Pin 1 S S SG S S D D D DD D Top Bottom Power 33 SD GD MOSFET Maximum Ratings TA = 25 °C unless otherwise

FDMC86160ET100 Distributors

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FDMC86160ET100 MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDMC86160ET100-like datasheet